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Test your basic knowledge |
Modern Material Science And Engineering
Start Test
Study First
Subject
:
engineering
Instructions:
Answer 50 questions in 15 minutes.
If you are not ready to take this test, you can
study here
.
Match each statement with the correct term.
Don't refresh. All questions and answers are randomly picked and ordered every time you load a test.
This is a study tool. The 3 wrong answers for each question are randomly chosen from answers to other questions. So, you might find at times the answers obvious, but you will see it re-enforces your understanding as you take the test each time.
1. For a slip to occur - a sufficient amount of stress must be applied to permanently deform the material
Interplanar Spacing
slip direction
interstitial defects
yield stress
2. Point defects that occur when an atom occupies a space that is normally vacant
Extinction Conditions
monocrystals
Scanning Electron Microscope SEM
interstitial defects
3. The presence of both screw and edge dislocations separated by a distance in the same lattice
mixed dislocations
grain growth
Diffraction
destructive interference
4. Homogeneous nucleation: grain boundaries: lattice/surface interactions:
burgers vectors
homogeneous nucleation
Dislocations form from three primary sources
HCP Hexagonal Close Packed
5. The equations used to determine the critical resolved shear stress in a material
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6. The filling of a vancacy in the partial plane of an edge dislocation by an adjacent atom resulting in a shrinking of the crystal in the direction perpendicular to the partial plane
negative climb
slip direction
Extinction Conditions
Scanning Electron Microscope SEM
7. The interaction of waves
Nuclei
Diffraction
Schmid's Law
slip planes
8. The third level of structure in materials - describing the sequencing of crystals at a level invisible to the human eye
slip
Transmission Electron Microscopy TEM
microstructure
FCC Face Centered Cubic
9. A means of relating the amount of spreading in a X- ray diffractogram to the thickness of the crystallites in the sample
Transmission Electron Microscopy TEM
substitional defects
Extinction Conditions
Scherrer Equation
10. The smallest subdivision of a lattice that still contains the characteristics of that lattice
bravais lattice
lattice parameters
Schottky Defect
unit cell
11. The edge lengths and angels of a unit cell; describes the sizes and shapes of the lattices
Scherrer Equation
lattice parameters
slip direction
Bragg's Equation
12. Microscopes that focus a high- energy beam of electrons at the source and collect the back- scattered beam of these electrons
Scanning Electron Microscope SEM
BCC Body Centered Cubic
Frenkel Defect
homogeneous nucleation
13. The increase in amplitude resulting from two or more waves interacting in phase
slip
Scanning Electron Microscope SEM
Frenkel Defect
constructive interference
14. Correlation used to estimate the yield strength of a given material - based on grain size
vacancies
slip planes
Hall-Petch Equation
Scherrer Equation
15. A numerical quantity developed by the American Society for Testing and Materials (ASTM) to characterize grain sizes in materials
Miller Indices
Dislocations form from three primary sources
grain size number
optical microscopy
16. Tiny clusters of arranged atoms that serve as the frameworks for subsequent crystal growth
Nuclei
microstructure
destructive interference
unit cell
17. The first set of panes in a material to experience slip under an applied stress
Miller Indices
primary slip system
Schottky Defect
Dislocations form from three primary sources
18. One of the bravais lattice that contains one atom in each corner of the unit cell as well as one atom in the center of the unit cell
Schottky Defect
slip
BCC Body Centered Cubic
grain size number
19. The amount of the unit cell occupied by atoms as opposed to void space
bravais lattice
slip
Dislocations form from three primary sources
Atomic Packing Factor APF
20. A flaw in the structure of a material that occurs at a single site in the lattice - such as vacancies - substitutions - and interstitial defects
negative climb
Transmission Electron Microscopy TEM
point defect
FCC Face Centered Cubic
21. The second step in the formation of crystallites - which is dependent on temperature and can be described using the arrhenius equation
grain growth
vacancies
grain size number
interstitial defects
22. Point defects that result when an atom in the lattice is replaced with an atom of a different element
nanocrystal
Schottky Defect
substitional defects
crystal structure
23. The lowest stress level at which a slip will begin in the material
mixed dislocations
Hall-Petch Equation
Critical Resolved Shear Stress
vacancies
24. The second level of the structure of materials - describing how the atoms are positioned in relation to one another as well and the type of bonding between them
heterogeneous nucleation
grain size number
atomic arrangement
yield stress
25. One of the bravais lattices that has one atom in each of the 8 corners of the unit cell and one atom on each face of the unit cell
Atomic Packing Factor APF
arrhenius equation
FCC Face Centered Cubic
lattice parameters
26. Mechanism by which dislocations move in directions that are perpendicular to the slip plane
Diffraction
optical microscopy
dislocation climb
slip system
27. The movement of dislocations through a crystal - caused when the material is placed under shear stress
Hall-Petch Equation
yield stress
slip
Dislocations
28. A point defect found in ceramic materials that occurs when a cation diffuses onto an interstitial site on the lattice
Frenkel Defect
bravais lattice
Transmission Electron Microscopy TEM
optical microscopy
29. Large scale lattice defects that occur from alterations to the structure of the lattice itself
burgers vectors
Hall-Petch Equation
Dislocations
bravais lattice
30. Clustering that occurs when a pure material cools sufficiently to self- support the formation of stable nuclei
Transmission Electron Microscopy TEM
Extinction Conditions
homogeneous nucleation
BCC Body Centered Cubic
31. A numerical system used to represent specifics planes in a lattice
interstitial defects
arrhenius equation
simple cubic
Miller Indices
32. The process of forming small aligned clusters of atoms that serve as the framework for crystal growth
interstitial defects
nucleation
destructive interference
negative climb
33. Materials in which the entire structure is a single unbroken grain
screw dislocation
Atomic Packing Factor APF
HCP Hexagonal Close Packed
monocrystals
34. A nullification caused by two waves interacting out of phase
optical microscopy
destructive interference
monocrystals
unit cell
35. New planes formed after the material has undergone slip
crystal mosaic
slip planes
nanocrystal
mixed dislocations
36. Regions of a material in which atoms are arranged in a regular pattern
Full-Width Half- Maximun FWHM
primary slip system
constructive interference
Crystallites
37. The first level of the structure of materials - describing the atoms present
lattice parameters
HCP Hexagonal Close Packed
slip planes
Atomic structure
38. The distance between repeated planes in a lattice
nucleation
Diffraction
crystal mosaic
Interplanar Spacing
39. The direction that dislocation moves in
slip direction
heterogeneous nucleation
Extinction Conditions
substitional defects
40. Point defects that result from the absence of an atom at a particular site
grain growth
monocrystals
substitional defects
vacancies
41. An electron microscope that passes the electron beam through the sample and used the difference in the beam scattering and diffraction to view the object
Extinction Conditions
negative climb
crystal mosaic
Transmission Electron Microscopy TEM
42. Lattice defect that occurs when the lattice is cut and shifted by a row of atomic spacing
homogeneous nucleation
crystal mosaic
screw dislocation
Critical Resolved Shear Stress
43. The line extending along the extra partial plane of atoms in an edge dislocation
dislocation line
Atomic structure
Scanning Electron Microscope SEM
theoretical density
44. Crystallite materials with sizes of nanometers in length
mixed dislocations
nanocrystal
interstitial defects
Nuclei
45. A hypothetical structure accounting for irregularities in the boundaries between crystallites
Dislocations
microstructure
grain boundaries
crystal mosaic
46. The ares of a material that separate different crystallite regions
edge dislocations
constructive interference
HCP Hexagonal Close Packed
grain boundaries
47. Formula that relates interplaner spacing in a lattice to constructive interference of diffracted X- rays
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48. A mathematical representation of the magnitude and direction of distortions in a lattice caused by dislocations
negative climb
Nuclei
burgers vectors
Schmid's Law
49. The fourth level of structure in materials - describing how the microstructures fit together to form the material as a whole
vacancies
monocrystals
slip planes
macrostructure
50. Composed of both the slip plane and the slip directions
FCC Face Centered Cubic
slip system
Diffraction
grain boundaries