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Test your basic knowledge |
Modern Material Science And Engineering
Start Test
Study First
Subject
:
engineering
Instructions:
Answer 50 questions in 15 minutes.
If you are not ready to take this test, you can
study here
.
Match each statement with the correct term.
Don't refresh. All questions and answers are randomly picked and ordered every time you load a test.
This is a study tool. The 3 wrong answers for each question are randomly chosen from answers to other questions. So, you might find at times the answers obvious, but you will see it re-enforces your understanding as you take the test each time.
1. The amount of the unit cell occupied by atoms as opposed to void space
homogeneous nucleation
Nuclei
burgers vectors
Atomic Packing Factor APF
2. Homogeneous nucleation: grain boundaries: lattice/surface interactions:
dislocation line
lattice parameters
Dislocations form from three primary sources
Scanning Electron Microscope SEM
3. The filling of a vancacy in the partial plane of an edge dislocation by an adjacent atom resulting in a shrinking of the crystal in the direction perpendicular to the partial plane
negative climb
lattice parameters
Full-Width Half- Maximun FWHM
Scherrer Equation
4. The systematic reduction in intensity of diffraction peaks from specific lattice planes
Extinction Conditions
boules
Atomic Packing Factor APF
grain growth
5. For a slip to occur - a sufficient amount of stress must be applied to permanently deform the material
yield stress
interstitial defects
Nuclei
burgers vectors
6. Large scale lattice defects that occur from alterations to the structure of the lattice itself
Atomic structure
grain growth
HCP Hexagonal Close Packed
Dislocations
7. Formula that relates interplaner spacing in a lattice to constructive interference of diffracted X- rays
8. Microscopes that focus a high- energy beam of electrons at the source and collect the back- scattered beam of these electrons
Scherrer Equation
interstitial defects
Scanning Electron Microscope SEM
optical microscopy
9. The second level of the structure of materials - describing how the atoms are positioned in relation to one another as well and the type of bonding between them
amorphous materials
Full-Width Half- Maximun FWHM
boules
atomic arrangement
10. The clustering of atoms around an impurity that provide a template for crystal growth
heterogeneous nucleation
screw dislocation
yield stress
slip planes
11. A hypothetical structure accounting for irregularities in the boundaries between crystallites
edge dislocations
amorphous materials
crystal mosaic
slip system
12. Point defects that occur when an atom occupies a space that is normally vacant
interstitial defects
edge dislocations
burgers vectors
FCC Face Centered Cubic
13. The movement of dislocations through a crystal - caused when the material is placed under shear stress
Scanning Electron Microscope SEM
slip
edge dislocations
burgers vectors
14. Mechanism by which dislocations move in directions that are perpendicular to the slip plane
Extinction Conditions
slip
dislocation climb
grain size number
15. An electron microscope that passes the electron beam through the sample and used the difference in the beam scattering and diffraction to view the object
Atomic Packing Factor APF
lattice parameters
Transmission Electron Microscopy TEM
Hall-Petch Equation
16. One of the bravais lattice that contains one atom in each corner of the unit cell as well as one atom in the center of the unit cell
grain growth
microstructure
BCC Body Centered Cubic
burgers vectors
17. Point defects that result from the absence of an atom at a particular site
burgers vectors
vacancies
Interplanar Spacing
crystal mosaic
18. The smallest subdivision of a lattice that still contains the characteristics of that lattice
Scanning Electron Microscope SEM
Full-Width Half- Maximun FWHM
Seed Crystal
unit cell
19. A standard used to measure the spread in the peak of a diffractogram - measures at the intensity value corresponding to the half highest value in the peak
Full-Width Half- Maximun FWHM
dislocation climb
vacancies
Miller Indices
20. A mathematical representation of the magnitude and direction of distortions in a lattice caused by dislocations
burgers vectors
microstructure
Nuclei
primary slip system
21. The distance between repeated planes in a lattice
destructive interference
yield stress
Interplanar Spacing
theoretical density
22. A point defect found in ceramic materials that occurs when a cation diffuses onto an interstitial site on the lattice
negative climb
slip
boules
Frenkel Defect
23. Lattice defects caused by the addition of a partial plane into an existing lattice structure
macrostructure
edge dislocations
interstitial defects
unit cell
24. The use of light to magnify objects up to 2000 times
grain size number
optical microscopy
destructive interference
nanocrystal
25. Crystallite materials with sizes of nanometers in length
HCP Hexagonal Close Packed
Scanning Electron Microscope SEM
constructive interference
nanocrystal
26. Materials whose order extends only to nearest neighbor atoms
Scanning Electron Microscope SEM
grain size number
heterogeneous nucleation
amorphous materials
27. The 14 distinct crystals structure into which atoms arrange themselves in materials
bravais lattice
Scanning Electron Microscope SEM
Scherrer Equation
Diffraction
28. One of the bravais lattices that has one atom in each of the 8 corners of the unit cell and one atom on each face of the unit cell
FCC Face Centered Cubic
theoretical density
lattice parameters
dislocation climb
29. The fourth level of structure in materials - describing how the microstructures fit together to form the material as a whole
Extinction Conditions
macrostructure
Full-Width Half- Maximun FWHM
interstitial defects
30. The lowest stress level at which a slip will begin in the material
Scherrer Equation
Bragg's Equation
Critical Resolved Shear Stress
boules
31. A specific set of h
Scherrer Equation
Hall-Petch Equation
Schmid's Law
Extinction Conditions
32. Provides a framework for the new atoms to follow in constructing a monocrystal
Seed Crystal
mixed dislocations
edge dislocations
slip planes
33. Generalized equation used to predict the temperature dependence of various physics properties
unit cell
dislocation climb
burgers vectors
arrhenius equation
34. Most common of the non - cubic bravais lattices; having six atoms forming a hexagon on both the top and bottom and a single atom positioned in the center - between the two hexagonal rings
Scherrer Equation
HCP Hexagonal Close Packed
Transmission Electron Microscopy TEM
Full-Width Half- Maximun FWHM
35. The equations used to determine the critical resolved shear stress in a material
36. The presence of both screw and edge dislocations separated by a distance in the same lattice
boules
mixed dislocations
theoretical density
bravais lattice
37. New planes formed after the material has undergone slip
slip planes
bravais lattice
crystal mosaic
boules
38. The process of forming small aligned clusters of atoms that serve as the framework for crystal growth
interstitial defects
grain boundaries
Bragg's Equation
nucleation
39. The second step in the formation of crystallites - which is dependent on temperature and can be described using the arrhenius equation
Scherrer Equation
nanocrystal
monocrystals
grain growth
40. A numerical quantity developed by the American Society for Testing and Materials (ASTM) to characterize grain sizes in materials
mixed dislocations
primary slip system
grain size number
yield stress
41. The direction that dislocation moves in
Atomic structure
slip direction
atomic arrangement
heterogeneous nucleation
42. A flaw in the structure of a material that occurs at a single site in the lattice - such as vacancies - substitutions - and interstitial defects
point defect
arrhenius equation
Miller Indices
monocrystals
43. The ares of a material that separate different crystallite regions
negative climb
Atomic structure
boules
grain boundaries
44. Tiny clusters of arranged atoms that serve as the frameworks for subsequent crystal growth
slip direction
nanocrystal
destructive interference
Nuclei
45. A nullification caused by two waves interacting out of phase
atomic arrangement
point defect
destructive interference
slip planes
46. The first set of panes in a material to experience slip under an applied stress
arrhenius equation
slip planes
primary slip system
unit cell
47. A point defect that occurs in ceramics when both a cation and an anion are missing from a lattice
Schottky Defect
Dislocations
amorphous materials
constructive interference
48. The increase in amplitude resulting from two or more waves interacting in phase
homogeneous nucleation
constructive interference
unit cell
Seed Crystal
49. Point defects that result when an atom in the lattice is replaced with an atom of a different element
substitional defects
BCC Body Centered Cubic
Crystallites
crystal mosaic
50. A means of relating the amount of spreading in a X- ray diffractogram to the thickness of the crystallites in the sample
slip system
Scherrer Equation
Dislocations
Schmid's Law