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Test your basic knowledge |
Modern Material Science And Engineering
Start Test
Study First
Subject
:
engineering
Instructions:
Answer 50 questions in 15 minutes.
If you are not ready to take this test, you can
study here
.
Match each statement with the correct term.
Don't refresh. All questions and answers are randomly picked and ordered every time you load a test.
This is a study tool. The 3 wrong answers for each question are randomly chosen from answers to other questions. So, you might find at times the answers obvious, but you will see it re-enforces your understanding as you take the test each time.
1. A standard used to measure the spread in the peak of a diffractogram - measures at the intensity value corresponding to the half highest value in the peak
atomic arrangement
substitional defects
Full-Width Half- Maximun FWHM
BCC Body Centered Cubic
2. The density a material would have if it consisted of a single perfect lattice
dislocation line
crystal mosaic
BCC Body Centered Cubic
theoretical density
3. The clustering of atoms around an impurity that provide a template for crystal growth
heterogeneous nucleation
Miller Indices
destructive interference
bravais lattice
4. The second level of the structure of materials - describing how the atoms are positioned in relation to one another as well and the type of bonding between them
slip planes
arrhenius equation
point defect
atomic arrangement
5. Composed of both the slip plane and the slip directions
Seed Crystal
Nuclei
Schottky Defect
slip system
6. The interaction of waves
bravais lattice
Diffraction
monocrystals
edge dislocations
7. Large scale lattice defects that occur from alterations to the structure of the lattice itself
constructive interference
Full-Width Half- Maximun FWHM
Extinction Conditions
Dislocations
8. The second step in the formation of crystallites - which is dependent on temperature and can be described using the arrhenius equation
grain growth
homogeneous nucleation
macrostructure
slip
9. The size - shape - and arrangement of atoms in a three- dimensional lattice
theoretical density
grain size number
crystal structure
Miller Indices
10. For a slip to occur - a sufficient amount of stress must be applied to permanently deform the material
yield stress
lattice parameters
BCC Body Centered Cubic
constructive interference
11. Generalized equation used to predict the temperature dependence of various physics properties
Seed Crystal
negative climb
arrhenius equation
slip direction
12. The ares of a material that separate different crystallite regions
Hall-Petch Equation
Extinction Conditions
grain boundaries
dislocation climb
13. An electron microscope that passes the electron beam through the sample and used the difference in the beam scattering and diffraction to view the object
grain growth
Transmission Electron Microscopy TEM
Hall-Petch Equation
nucleation
14. The increase in amplitude resulting from two or more waves interacting in phase
Dislocations form from three primary sources
constructive interference
Extinction Conditions
destructive interference
15. Regions of a material in which atoms are arranged in a regular pattern
Dislocations
Nuclei
macrostructure
Crystallites
16. A flaw in the structure of a material that occurs at a single site in the lattice - such as vacancies - substitutions - and interstitial defects
Seed Crystal
slip planes
point defect
Schmid's Law
17. A hypothetical structure accounting for irregularities in the boundaries between crystallites
crystal mosaic
nucleation
Dislocations form from three primary sources
interstitial defects
18. Materials whose order extends only to nearest neighbor atoms
burgers vectors
optical microscopy
Transmission Electron Microscopy TEM
amorphous materials
19. The third level of structure in materials - describing the sequencing of crystals at a level invisible to the human eye
Full-Width Half- Maximun FWHM
Hall-Petch Equation
Diffraction
microstructure
20. A numerical quantity developed by the American Society for Testing and Materials (ASTM) to characterize grain sizes in materials
Schmid's Law
HCP Hexagonal Close Packed
monocrystals
grain size number
21. Mechanism by which dislocations move in directions that are perpendicular to the slip plane
dislocation climb
interstitial defects
FCC Face Centered Cubic
Scanning Electron Microscope SEM
22. Lattice defects caused by the addition of a partial plane into an existing lattice structure
edge dislocations
Extinction Conditions
slip
grain growth
23. The distance between repeated planes in a lattice
arrhenius equation
Full-Width Half- Maximun FWHM
burgers vectors
Interplanar Spacing
24. The edge lengths and angels of a unit cell; describes the sizes and shapes of the lattices
Crystallites
lattice parameters
Extinction Conditions
substitional defects
25. A point defect found in ceramic materials that occurs when a cation diffuses onto an interstitial site on the lattice
interstitial defects
nanocrystal
Frenkel Defect
amorphous materials
26. The equations used to determine the critical resolved shear stress in a material
27. The amount of the unit cell occupied by atoms as opposed to void space
atomic arrangement
macrostructure
Atomic Packing Factor APF
interstitial defects
28. Point defects that result when an atom in the lattice is replaced with an atom of a different element
substitional defects
boules
lattice parameters
Bragg's Equation
29. The movement of dislocations through a crystal - caused when the material is placed under shear stress
Scanning Electron Microscope SEM
slip
primary slip system
macrostructure
30. Tiny clusters of arranged atoms that serve as the frameworks for subsequent crystal growth
Nuclei
grain boundaries
Schottky Defect
dislocation climb
31. Most common of the non - cubic bravais lattices; having six atoms forming a hexagon on both the top and bottom and a single atom positioned in the center - between the two hexagonal rings
point defect
bravais lattice
HCP Hexagonal Close Packed
slip direction
32. A means of relating the amount of spreading in a X- ray diffractogram to the thickness of the crystallites in the sample
substitional defects
Transmission Electron Microscopy TEM
Scherrer Equation
crystal mosaic
33. A mathematical representation of the magnitude and direction of distortions in a lattice caused by dislocations
burgers vectors
dislocation line
Dislocations
edge dislocations
34. The line extending along the extra partial plane of atoms in an edge dislocation
mixed dislocations
slip direction
dislocation line
Seed Crystal
35. The lowest stress level at which a slip will begin in the material
Critical Resolved Shear Stress
Frenkel Defect
bravais lattice
lattice parameters
36. The use of light to magnify objects up to 2000 times
grain boundaries
dislocation line
Crystallites
optical microscopy
37. Crystallite materials with sizes of nanometers in length
slip
BCC Body Centered Cubic
nanocrystal
bravais lattice
38. Provides a framework for the new atoms to follow in constructing a monocrystal
Seed Crystal
dislocation line
Schmid's Law
nucleation
39. A point defect that occurs in ceramics when both a cation and an anion are missing from a lattice
bravais lattice
amorphous materials
grain growth
Schottky Defect
40. Correlation used to estimate the yield strength of a given material - based on grain size
nucleation
Hall-Petch Equation
interstitial defects
simple cubic
41. The first set of panes in a material to experience slip under an applied stress
Extinction Conditions
primary slip system
Atomic Packing Factor APF
bravais lattice
42. One of the bravais lattice that contains one atom in each corner of the unit cell as well as one atom in the center of the unit cell
Interplanar Spacing
lattice parameters
BCC Body Centered Cubic
point defect
43. A nullification caused by two waves interacting out of phase
bravais lattice
primary slip system
grain boundaries
destructive interference
44. New planes formed after the material has undergone slip
screw dislocation
Schmid's Law
point defect
slip planes
45. Clustering that occurs when a pure material cools sufficiently to self- support the formation of stable nuclei
Dislocations
monocrystals
homogeneous nucleation
boules
46. Lattice defect that occurs when the lattice is cut and shifted by a row of atomic spacing
screw dislocation
Nuclei
Extinction Conditions
atomic arrangement
47. Point defects that occur when an atom occupies a space that is normally vacant
Nuclei
bravais lattice
point defect
interstitial defects
48. Point defects that result from the absence of an atom at a particular site
homogeneous nucleation
vacancies
FCC Face Centered Cubic
grain boundaries
49. The filling of a vancacy in the partial plane of an edge dislocation by an adjacent atom resulting in a shrinking of the crystal in the direction perpendicular to the partial plane
negative climb
interstitial defects
Atomic structure
unit cell
50. A specific set of h
Hall-Petch Equation
nucleation
Extinction Conditions
Miller Indices